| PART |
Description |
Maker |
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| TC74ACT151P07 TC74ACT151F TC74ACT151FN TC74ACT151P |
CMOS Digital Integrated Circuit Silicon Monolithic 8-Channel Multiplexer
|
Toshiba Semiconductor
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| IP4286CZ6-TBF IP4286CZ6-TTY |
Integrated 4-channel ESD protection UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, MO-252
|
NXP Semiconductors N.V.
|
| ADUM6200 ADUM6201 |
Dual-Channel, 5 <span style="text-transform: lowercase">k</span>V Isolators with Integrated DC/DC Converter (2/0 channel directionality)
Dual-Channel, 5 kV Isolators with Integrated DC/DC Converter (1/1 channel directionality)
|
Analog Devices
|
| TD62S310AFM |
1-Channel Darlington Source-Current Driver
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MIG20J906H MIG20J906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| 2SK3030 2SK3023 2SK3030TENTATIVE |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
